| PART |
Description |
Maker |
| EBJ10EE8BAWA-8C-E EBJ10EE8BAWA-AE-E EBJ10EE8BAWA-D |
1GB Unbuffered DDR3 SDRAM DIMM
|
Elpida Memory
|
| EBJ10UE8BDF0-AE-F EBJ10UE8BDF0-DJ-F EBJ10UE8BDF0-G |
1GB Unbuffered DDR3 SDRAM DIMM
|
Elpida Memory
|
| EBJ10EE8BAFA-8C-E EBJ10EE8BAFA-AE-E EBJ10EE8BAFA-D |
128M X 72 DDR DRAM MODULE, DMA240
1GB Unbuffered DDR3 SDRAM DIMM
|
ELPIDA MEMORY INC
|
| EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 |
512MB DDR SDRAM SO DIMM
256MB Unbuffered DDR SDRAM DIMM
1GB Unbuffered DDR SDRAM DIMM
512MB Registered DDR SDRAM DIMM
256MB DDR SDRAM SO DIMM
512MB Unbuffered DDR SDRAM DIMM
1GB DDR SDRAM SO DIMM
1GB Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
http://
ELPIDA MEMORY INC
|
| H5TQ1G63DFRG7J H5TQ1G63DFRG7L H5TQ1G63DFRH9I H5TQ1 |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| K4B1G0846G-BCMA K4B1G0846G-BCH9 K4B1G0846G-BCK0 K4 |
1Gb G-die DDR3 SDRAM
|
Samsung semiconductor
|
| 64M16 256M4 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| K4B1G1646C |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| EBE10AE8ACFA EBE10AE8ACFA-6E-E EBE10AE8ACFA-8E-E |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
1GB Registered DDR2 SDRAM DIMM
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存（128M的话x72位，2个等级）
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| EBE11UE6ACSA-8G-E EBE11UE6ACSA-6E-E EBE11UE6ACSA-8 |
1GB DDR2 SDRAM SO-DIMM
|
Elpida Memory
|
| EBJ21UE8BDS1-DJ-F EBJ21UE8BDS1-AE-F |
2GB DDR3 SDRAM SO-DIMM
|
Elpida Memory
|
